IPD5N25S3430ATMA1 vs IPB35N10S3L26ATMA1 比較
詳細並排比較 IPD5N25S3430ATMA1 由 Infineon 與 IPB35N10S3L26ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD5N25S3430ATMA1 | IPB35N10S3L26ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel MOSFET | — |
| Technology | OptiMOS (planar-trench) | — |
| Drain-Source Voltage (VDS) | 250 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 5 A | — |
| Pulsed Drain Current (IDM) | 20 A | — |
| RDS(on) max @ VGS=10V | 430 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3 V typ / 4 V max | — |
| Input Capacitance (Ciss) | 422 pF typical | — |
| Power Dissipation (PD, Tc=25°C) | 41 W | — |
| 工作接面溫度 | -55 °C to +175 °C | — |
| 封裝 | PG-TO252-3-313 (DPAK, surface mount) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | — |
| RoHS 狀態 | ROHS3 Compliant | [DATA_NEEDED: RoHS status] |
| Lead Finish | Matte Tin (lead-free) | — |
| MSL 等級 | 1 (per JEDEC J-STD-020) | — |
| Configuration | Single, 3-pin (2+Tab) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS-T |
| Channel Type | — | N-Channel |
| Maximum Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC | — | 35 A |
| Power Dissipation (PD) at TC | — | 71 W |
| Package Type | — | PG-TO263-3 (D2PAK-2) |
| 腳位數 | — | 3 (Gate, Drain, Source) |
| Channel Mode | — | Enhancement |
| RDS(on) (typical per Infineon product page) | — | 26.3 mΩ |
| Typical Gate Charge Qg @ Vgs | — | 80 nC |
| Maximum Drain-Source Resistance Rds | — | 1.7 mΩ (per RS Components listing) |
| Minimum Operating Temperature | — | -55 C |
| Maximum Power Dissipation Pd | — | 81 W (per RS Components listing) |
| AEC-Q101 Qualification | — | [DATA_NEEDED: AEC-Q101 qualification status] |