IPD60N10S412ATMA1 vs IAUC120N06S5L015ATMA1 Perbandingan

Perbandingan bersamaan detil IPD60N10S412ATMA1 dari Infineon dan IAUC120N06S5L015ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUC120N06S5L015ATMA1 IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPD60N10S412ATMA1 IAUC120N06S5L015ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IPD60N10S412ATMA1 —
Tipe Transistor N-Channel MOSFET, Enhancement Mode —
Drain-Source Voltage (VDS) 100 V 60 V
Continuous Drain Current (ID, TC=25C) 60 A —
Power Dissipation (PD, TC=25C) 94 W —
RDS(on) Max @ VGS=10V 12.2 mOhm —
Suhu Hubung Kerja -55 C to +175 C —
Paket PG-TO252-3-313 (DPAK) PG-TDSON-8-43 (Surface Mount)
Tipe Mounting Surface Mount Surface Mount (exposed pad)
Jumlah Pin 3 (2 + Tab) —
Level MSL MSL1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL level]
Peak Reflow Temperature 260 C —
AEC-Q101 Qualification Qualified (Automotive Grade) —
Status RoHS Compliant (Green Product) Compliant
Avalanche Tested 100% Avalanche Tested —
Bebas Halogen Yes (per Infineon definition) —
Technology — N-Channel MOSFET (OptiMOS 5)
Continuous Drain Current (ID, Tc=25C) — 235 A
On-Resistance RDS(on) max (VGS=10 V) — 1.5 mΩ
Gate Charge (Qg, typ) — 88 nC
Power Dissipation (PD, Tc=25C) — 167 W
Rentang Suhu Kerja — -55C to +175C (Tj)
Automotive Qualification — AEC-Q101 qualified
Gate-Source Voltage (VGS) max — ±20 V
Drain-Source On-State Resistance Test Conditions — VGS = 10 V, ID = 50 A
Typical Application — Automotive DC-DC, battery switches, motor drives

Spek dan Sumber

IAUC120N06S5L015ATMA1

📄 Lihat Spek

Lihat Selengkapnya →

Buka Semua Produk Buat BOM Ajukan Diskon