IPD60N10S412ATMA1 vs IAUC120N06S5L015ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD60N10S412ATMA1 disebabkan oleh Infineon dan IAUC120N06S5L015ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC120N06S5L015ATMA1 IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPD60N10S412ATMA1 IAUC120N06S5L015ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IPD60N10S412ATMA1 —
Jenis Transistor N-Channel MOSFET, Enhancement Mode —
Drain-Source Voltage (VDS) 100 V 60 V
Continuous Drain Current (ID, TC=25C) 60 A —
Power Dissipation (PD, TC=25C) 94 W —
RDS(on) Max @ VGS=10V 12.2 mOhm —
Suhu Hubungan Operasi -55 C to +175 C —
Kemasan PG-TO252-3-313 (DPAK) PG-TDSON-8-43 (Surface Mount)
Jenis Pemasangan Surface Mount Surface Mount (exposed pad)
Kiraan Pin 3 (2 + Tab) —
Aras MSL MSL1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL level]
Peak Reflow Temperature 260 C —
AEC-Q101 Qualification Qualified (Automotive Grade) —
Status RoHS Compliant (Green Product) Compliant
Avalanche Tested 100% Avalanche Tested —
Boson Bebas Yes (per Infineon definition) —
Technology — N-Channel MOSFET (OptiMOS 5)
Continuous Drain Current (ID, Tc=25C) — 235 A
On-Resistance RDS(on) max (VGS=10 V) — 1.5 mΩ
Gate Charge (Qg, typ) — 88 nC
Power Dissipation (PD, Tc=25C) — 167 W
Gambaran Suhu Operasi — -55C to +175C (Tj)
Automotive Qualification — AEC-Q101 qualified
Gate-Source Voltage (VGS) max — ±20 V
Drain-Source On-State Resistance Test Conditions — VGS = 10 V, ID = 50 A
Typical Application — Automotive DC-DC, battery switches, motor drives

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