IPD60N10S412ATMA1 vs IPD50N06S409ATMA2 Perbandingan
Perbandingan bersamaan detil IPD60N10S412ATMA1 dari Infineon dan IPD50N06S409ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD60N10S412ATMA1 | IPD50N06S409ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPD60N10S412ATMA1 | — |
| Tipe Transistor | N-Channel MOSFET, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID, TC=25C) | 60 A | — |
| Power Dissipation (PD, TC=25C) | 94 W | — |
| RDS(on) Max @ VGS=10V | 12.2 mOhm | — |
| Suhu Hubung Kerja | -55 C to +175 C | -55 °C to +175 °C |
| Paket | PG-TO252-3-313 (DPAK) | PG-TO252-3-11 (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 3 (2 + Tab) | 3 (2 + Tab) |
| Level MSL | MSL1 (per JEDEC J-STD-020) | — |
| Peak Reflow Temperature | 260 C | — |
| AEC-Q101 Qualification | Qualified (Automotive Grade) | — |
| Status RoHS | Compliant (Green Product) | Compliant |
| Avalanche Tested | 100% Avalanche Tested | — |
| Bebas Halogen | Yes (per Infineon definition) | — |
| Technology | — | N-Channel MOSFET (OptiMOS) |
| Continuous Drain Current (ID) at Tc | — | 50 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | — | 9 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (Pd) at Tc | — | 71 W |
| Automotive Qualification | — | AEC-Q101 |
| Lead-Free / Halogen-Free | — | [DATA_NEEDED] |