IPD60R210PFD7SAUMA1 vs IPD60R280P7SAUMA1 Perbandingan
Perbandingan bersamaan detil IPD60R210PFD7SAUMA1 dari Infineon dan IPD60R280P7SAUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPD60R210PFD7SAUMA1 - 600V CoolMOS PFD7 210mOhm MOSFET | Infineon
IPD60R210PFD7SAUMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | IPD60R210PFD7SAUMA1 | IPD60R280P7SAUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | CoolMOS PFD7 | — |
| Technology | Superjunction (CoolMOS) N-Channel Power MOSFET | CoolMOS P7 Superjunction (SJ) N-channel |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc) | 16 A | 12 A |
| On-Resistance (RDS(on), max) | 210 mOhm | — |
| Power Dissipation (Ptot, Tc=25C) | 64 W | — |
| Gate Threshold Voltage (VGS(th), typ) | 3.5 V | — |
| Gate Charge (Qg, typ) | [DATA_NEEDED: Qg value] | — |
| Package Type | TO-252 (DPAK) | — |
| Manufacturer Package Designator | PG-TO252-3-344 | — |
| Tipe Mounting | Surface Mount (SMT) | Surface Mount |
| Pin Configuration | 3-Pin (2+Tab) - Gate, Drain (tab), Source | — |
| Rentang Suhu Kerja | -55C to +150C (TJ) | — |
| Lead-Free / RoHS | Yes (compliant) | — |
| Application Segment | Consumer-grade SMPS | — |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on)) | — | 280 mΩ (typical) |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | 4 V max @ ID = 190 µA |
| Total Power Dissipation (Ptot, Tc) | — | 53 W |
| Operating Junction Temperature (TJ) | — | -40 °C to +150 °C |
| Paket | — | PG-TO252-3 (DPAK) |
| Level MSL | — | 1 |
| Series | — | CoolMOS P7 (7th generation, 600 V) |
| Status RoHS | — | Compliant |
| Integrated ESD Protection | — | Yes |