IPD60R380C6ATMA1 vs IPD60R145CFD7ATMA1 Perbandingan

Perbandingan bersamaan detil IPD60R380C6ATMA1 dari Infineon dan IPD60R145CFD7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD60R380C6ATMA1 IPD60R145CFD7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID) at TC=25C 10.6 A —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed drain current] —
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V 380 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: gate-source voltage max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at TC=25C 83 W —
Operating Junction Temperature (TJ) -55C to +150C —
Storage Temperature [DATA_NEEDED: storage temperature] —
Technology CoolMOS C6 Superjunction CoolMOS CFD7 (superjunction)
FET Type N-Channel N-Channel
Paket PG-TO252-3 (DPAK) TO-252AA (DPAK) surface mount
Tipe Mounting Surface Mount Surface Mount (DPAK, 3-pin + tab)
Level MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Status RoHS Compliant Compliant
Drain-Tab Connection Exposed pad (electrically connected to drain) —
Drain-Source Voltage (V<sub>DS</sub>) — 600 V
Continuous Drain Current (I<sub>D</sub>) — 16 A (T<sub>C</sub> = 25C)
On-Resistance R<sub>DS(on)</sub> max — 145 mOhm
Power Dissipation (P<sub>D</sub>) — 83 W (T<sub>C</sub> = 25C)
Gate Threshold Voltage V<sub>GS(th)</sub> — [DATA_NEEDED: Vth typical/min/max]
Body Diode — Integrated fast body diode (low Q<sub>rr</sub>)
Suhu Kerja — -55C to +150C (junction)
Jumlah Pin — 3 (Gate, Drain, Source)
Series — CoolMOS CFD7
Target Application — ZVS / LLC resonant converters, soft switching

Spek dan Sumber

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