IPD60R380C6ATMA1 vs IPD60R145CFD7ATMA1 比較

詳細並排比較 IPD60R380C6ATMA1 由 Infineon 與 IPD60R145CFD7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPD60R380C6ATMA1 IPD60R380C6ATMA1 - 600V CoolMOS C6 N-Channel MOSFET | Infineon

IPD60R380C6ATMA1 - 600V CoolMOS C6 N-Channel MOSFET | Infineon

IPD60R380C6ATMA1 ✓ 啟用中

規格比較

參數 IPD60R380C6ATMA1 IPD60R145CFD7ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID) at TC=25C 10.6 A —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed drain current] —
Static Drain-Source On-Resistance RDS(on) max @ VGS=10V 380 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: gate-source voltage max] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) at TC=25C 83 W —
Operating Junction Temperature (TJ) -55C to +150C —
Storage Temperature [DATA_NEEDED: storage temperature] —
Technology CoolMOS C6 Superjunction CoolMOS CFD7 (superjunction)
FET Type N-Channel N-Channel
封裝 PG-TO252-3 (DPAK) TO-252AA (DPAK) surface mount
安裝類型 Surface Mount Surface Mount (DPAK, 3-pin + tab)
MSL 等級 [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
RoHS 狀態 Compliant Compliant
Drain-Tab Connection Exposed pad (electrically connected to drain) —
Drain-Source Voltage (V<sub>DS</sub>) — 600 V
Continuous Drain Current (I<sub>D</sub>) — 16 A (T<sub>C</sub> = 25C)
On-Resistance R<sub>DS(on)</sub> max — 145 mOhm
Power Dissipation (P<sub>D</sub>) — 83 W (T<sub>C</sub> = 25C)
Gate Threshold Voltage V<sub>GS(th)</sub> — [DATA_NEEDED: Vth typical/min/max]
Body Diode — Integrated fast body diode (low Q<sub>rr</sub>)
工作溫度 — -55C to +150C (junction)
腳位數 — 3 (Gate, Drain, Source)
Series — CoolMOS CFD7
Target Application — ZVS / LLC resonant converters, soft switching

資料表與資源

瀏覽所有產品 建立 BOM 索取報價