IPD60R600PFD7SAUMA1 vs IPB60R040CFD7ATMA1 Perbandingan
Perbandingan bersamaan detil IPD60R600PFD7SAUMA1 dari Infineon dan IPB60R040CFD7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPD60R600PFD7SAUMA1 - 600V 6A 600mΩ CoolMOS PFD7 MOSFET | Infineon
IPD60R600PFD7SAUMA1 ✓ AktifInfineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPD60R600PFD7SAUMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | — | In Stock |
| Harga Unit (USD) | — | $5,19 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS PFD7 | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Technology | Superjunction (CoolMOS) | Superjunction (SJ) N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | 600 V | — |
| Continuous Drain Current (I_D) | 6 A (Tc) | — |
| R_DS(on) Max | 600 mΩ @ V_GS = 10 V, I_D = 1.7 A | — |
| Total Gate Charge (Q_g) | 8.5 nC | — |
| Output Capacitance (C_oss) | 8 pF @ 400 V | — |
| Power Dissipation (P_D) | 31 W (Tc) | — |
| Gate Threshold Voltage (V_GS(th)) | 3.5 V (typ) | — |
| Paket | PG-TO252-3 (DPAK) | PG-TO263-3-2 (D2PAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -55°C to +150°C (Tj) | — |
| Level MSL | 1 (per JEDEC J-STD-020) | 1 |
| Status RoHS | Compliant | Compliant |
| Reel Quantity | 2500 | — |
| Product Family | — | CoolMOS CFD7 |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 40 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 4 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| Dissipasi Listrik (TC=25°C) | — | 227 W |
| Rentang Suhu Kerja | — | -55°C to +150°C |
| Integrated Body Diode | — | Yes - ultra-fast CoolMOS CFD7 diode |
| Lead-Free | — | Yes |
| Target Applications | — | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |