IPD65R380E6ATMA1 vs IPD60R360P7SAUMA1 Perbandingan
Perbandingan bersamaan detil IPD65R380E6ATMA1 dari Infineon dan IPD60R360P7SAUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD65R380E6ATMA1 | IPD60R360P7SAUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS™ E6 | CoolMOS P7 |
| Tipe Transistor | N-Channel MOSFET | — |
| Technology | Superjunction (CoolMOS™) | Superjunction (SJ) N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | 650 V | — |
| Continuous Drain Current (I_D) at T_C | 10.6 A | — |
| R_DS(on) max at V_GS=10V | 380 mΩ | — |
| R_DS(on) test conditions | 3.2 A, 10 V | — |
| Gate-Source Voltage (V_GS) max | ±20 V | — |
| Gate Threshold Voltage (V_GS(th)) | 3.5 V typ | — |
| Gate Charge (Q_G) | 39 nC at 10 V | — |
| Input Capacitance (C_iss) | 710 pF at 100 V | — |
| Power Dissipation (P_D) at T_C | 83 W | — |
| Rentang Suhu Kerja | -55 °C to +150 °C | -55C to +150C (junction) |
| Paket | PG-TO252-3 (DPAK), surface mount | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 | 1 (per JEDEC J-STD-020) |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID) at TC | — | 9 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 360 mOhm (typ, VGS = 10 V) |
| Power Dissipation (PD) at TC | — | 41 W |
| Gate-Source Threshold Voltage (VGS(th)) | — | 3.0 V to 4.5 V (typ) |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Paket / Case | — | PG-TO252-3 (DPAK) |
| Jumlah Pin | — | 3 |
| Channel Type | — | N-Channel |