IPD65R380E6ATMA1 vs IPD60R360P7SAUMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD65R380E6ATMA1 sa pamamagitan ng Infineon at IPD60R360P7SAUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD60R360P7SAUMA1 IPD60R360P7SAUMA1 - 600V 360mOhm CoolMOS P7 MOSFET | Infineon

IPD60R360P7SAUMA1 - 600V 360mOhm CoolMOS P7 MOSFET | Infineon

IPD60R360P7SAUMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD65R380E6ATMA1 IPD60R360P7SAUMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS™ E6 CoolMOS P7
Uri ng Transistor N-Channel MOSFET —
Technology Superjunction (CoolMOS™) Superjunction (SJ) N-Channel MOSFET
Drain-Source Voltage (V_DS) 650 V —
Continuous Drain Current (I_D) at T_C 10.6 A —
R_DS(on) max at V_GS=10V 380 mΩ —
R_DS(on) test conditions 3.2 A, 10 V —
Gate-Source Voltage (V_GS) max ±20 V —
Gate Threshold Voltage (V_GS(th)) 3.5 V typ —
Gate Charge (Q_G) 39 nC at 10 V —
Input Capacitance (C_iss) 710 pF at 100 V —
Power Dissipation (P_D) at T_C 83 W —
Hanay ng Temperature na Operasyon -55 °C to +150 °C -55C to +150C (junction)
Packhaging PG-TO252-3 (DPAK), surface mount —
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant Compliant
Level ng MSL 1 1 (per JEDEC J-STD-020)
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID) at TC — 9 A
Static Drain-Source On-Resistance (RDS(on)) — 360 mOhm (typ, VGS = 10 V)
Power Dissipation (PD) at TC — 41 W
Gate-Source Threshold Voltage (VGS(th)) — 3.0 V to 4.5 V (typ)
Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Packhaging / Kaso — PG-TO252-3 (DPAK)
Bilang ng Pins — 3
Channel Type — N-Channel

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