IPD70N10S312ATMA1 vs IPD35N10S3L26ATMA2 Perbandingan

Perbandingan bersamaan detil IPD70N10S312ATMA1 dari Infineon dan IPD35N10S3L26ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD70N10S312ATMA1 IPD35N10S3L26ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IPD70N10S312ATMA1 —
Product Family OptiMOS-T Power-Transistor OptiMOS-T
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc) 70 A 35 A
Pulsed Drain Current (IDM) 180 A —
Power Dissipation (PD, Tc) 125 W —
On-State Resistance (RDS(on)) 11.1 mΩ @ 70 A, 10 V VGS —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Input Capacitance (Ciss) 4355 pF @ 25 V —
Total Gate Charge (Qg) 65 nC @ 10 V —
Operating Temperature (TJ) -55 °C to +175 °C —
Paket PG-TO252-3-11 (DPAK, 2 Leads + Tab) PG-TO252-3-11 (DPAK)
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (up to 260 °C peak reflow) [DATA_NEEDED: MSL rating]
Automotive Qualification AEC-Q101 AEC-Q101
Avalanche Tested 100 % (per datasheet) —
RoHS Compliance Green product, RoHS compliant —
Tipe Transistor — N-Channel MOSFET
On-Resistance R<sub>DS(on)</sub> max — 24 mOhm
Power Dissipation (Ptot, Tc) — 71 W
Gate Threshold V<sub>GS(th)</sub> — [DATA_NEEDED: gate threshold typical/range]
Rentang Suhu Kerja — [DATA_NEEDED: Tj min/max]
Jumlah Pin — 3 (Drain, Source, Gate + tab)
Technology — Trench MOSFET (OptiMOS-T)
Status RoHS — Compliant
Lead-Free — Yes

Spek dan Sumber

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