IPD70N10S312ATMA1 vs IPD35N10S3L26ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD70N10S312ATMA1 disebabkan oleh Infineon dan IPD35N10S3L26ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD70N10S312ATMA1 IPD35N10S3L26ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IPD70N10S312ATMA1 —
Product Family OptiMOS-T Power-Transistor OptiMOS-T
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc) 70 A 35 A
Pulsed Drain Current (IDM) 180 A —
Power Dissipation (PD, Tc) 125 W —
On-State Resistance (RDS(on)) 11.1 mΩ @ 70 A, 10 V VGS —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Input Capacitance (Ciss) 4355 pF @ 25 V —
Total Gate Charge (Qg) 65 nC @ 10 V —
Operating Temperature (TJ) -55 °C to +175 °C —
Kemasan PG-TO252-3-11 (DPAK, 2 Leads + Tab) PG-TO252-3-11 (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL1 (up to 260 °C peak reflow) [DATA_NEEDED: MSL rating]
Automotive Qualification AEC-Q101 AEC-Q101
Avalanche Tested 100 % (per datasheet) —
RoHS Compliance Green product, RoHS compliant —
Jenis Transistor — N-Channel MOSFET
On-Resistance R<sub>DS(on)</sub> max — 24 mOhm
Power Dissipation (Ptot, Tc) — 71 W
Gate Threshold V<sub>GS(th)</sub> — [DATA_NEEDED: gate threshold typical/range]
Gambaran Suhu Operasi — [DATA_NEEDED: Tj min/max]
Kiraan Pin — 3 (Drain, Source, Gate + tab)
Technology — Trench MOSFET (OptiMOS-T)
Status RoHS — Compliant
Lead-Free — Yes

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga