IPD70N10S312ATMA2 vs IPD70N10S312ATMA1 Perbandingan

Perbandingan bersamaan detil IPD70N10S312ATMA2 dari Infineon dan IPD70N10S312ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD70N10S312ATMA2 IPD70N10S312ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Number IPD70N10S312ATMA2 IPD70N10S312ATMA1
Technology OptiMOS-T Power-MOSFET (N-Channel) —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc) 70 A 70 A
Power Dissipation (Ptot, Tc=25C) 125 W —
On-State Resistance RDS(on) [DATA_NEEDED: typical RDS(on) at VGS=10V] —
Gate-Source Voltage (VGS) ±20 V ±20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] [DATA_NEEDED: VGS(th)]
Rentang Suhu Kerja -55C to +175C —
Paket PG-TO252-3-11 (DPAK) PG-TO252-3-11 (DPAK, 2 Leads + Tab)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (Gate, Drain, Source) —
Channel Type N-Channel Enhancement Mode —
Status RoHS Compliant —
Level MSL 1 (unlimited floor life) MSL1 (up to 260 °C peak reflow)
Avalanche Rated Yes —
Product Family — OptiMOS-T Power-Transistor
FET Type — N-Channel, Enhancement Mode
Pulsed Drain Current (IDM) — 180 A
Power Dissipation (PD, Tc) — 125 W
On-State Resistance (RDS(on)) — 11.1 mΩ @ 70 A, 10 V VGS
Input Capacitance (Ciss) — 4355 pF @ 25 V
Total Gate Charge (Qg) — 65 nC @ 10 V
Operating Temperature (TJ) — -55 °C to +175 °C
Automotive Qualification — AEC-Q101
Avalanche Tested — 100 % (per datasheet)
RoHS Compliance — Green product, RoHS compliant

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