IPD70N10S312ATMA2 vs IPD70N10S312ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD70N10S312ATMA2 disebabkan oleh Infineon dan IPD70N10S312ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD70N10S312ATMA2 IPD70N10S312ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Number IPD70N10S312ATMA2 IPD70N10S312ATMA1
Technology OptiMOS-T Power-MOSFET (N-Channel) —
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID, Tc) 70 A 70 A
Power Dissipation (Ptot, Tc=25C) 125 W —
On-State Resistance RDS(on) [DATA_NEEDED: typical RDS(on) at VGS=10V] —
Gate-Source Voltage (VGS) ±20 V ±20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] [DATA_NEEDED: VGS(th)]
Gambaran Suhu Operasi -55C to +175C —
Kemasan PG-TO252-3-11 (DPAK) PG-TO252-3-11 (DPAK, 2 Leads + Tab)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (Gate, Drain, Source) —
Channel Type N-Channel Enhancement Mode —
Status RoHS Compliant —
Aras MSL 1 (unlimited floor life) MSL1 (up to 260 °C peak reflow)
Avalanche Rated Yes —
Product Family — OptiMOS-T Power-Transistor
FET Type — N-Channel, Enhancement Mode
Pulsed Drain Current (IDM) — 180 A
Power Dissipation (PD, Tc) — 125 W
On-State Resistance (RDS(on)) — 11.1 mΩ @ 70 A, 10 V VGS
Input Capacitance (Ciss) — 4355 pF @ 25 V
Total Gate Charge (Qg) — 65 nC @ 10 V
Operating Temperature (TJ) — -55 °C to +175 °C
Automotive Qualification — AEC-Q101
Avalanche Tested — 100 % (per datasheet)
RoHS Compliance — Green product, RoHS compliant

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