IPD70N10S3L12ATMA1 vs BSC076N04NDATMA1 Perbandingan

Perbandingan bersamaan detil IPD70N10S3L12ATMA1 dari Infineon dan BSC076N04NDATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPD70N10S3L12ATMA1 IPD70N10S3L12ATMA1 - 100V 70A OptiMOS-T MOSFET | Infineon

IPD70N10S3L12ATMA1 - 100V 70A OptiMOS-T MOSFET | Infineon

IPD70N10S3L12ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPD70N10S3L12ATMA1 BSC076N04NDATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T —
Tipe Transistor N-Channel MOSFET (Enhancement Mode) —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID, Tc) 70 A —
Pulsed Drain Current (IDM) 180 A —
Power Dissipation (Ptot, Tc) 125 W —
On-State Resistance RDS(on) typ @ VGS=10V 11.5 mΩ —
Rentang Suhu Kerja -55 °C to +175 °C (junction) —
Paket PG-TO252-3-11 (DPAK) —
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (Drain, Gate, Source + tab) —
Level MSL MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) —
Automotive Qualification AEC-Q101 qualified —
Avalanche Rating 100 % avalanche tested —
Status RoHS Compliant (Green Product) —
Avalanche Energy (Single Pulse) [DATA_NEEDED: EAS value] —
Series — OptiMOS 3
Configuration — Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) max — 40 V
Continuous Drain Current (ID) — 20 A (Tc)
Gate Threshold Voltage (VGS(th)) — 4 V (max, typical)
On-Resistance RDS(on) max — 7.6 mOhm
Power Dissipation (Ta) — 2.3 W
Power Dissipation (Tc) — 65 W
Technology — Trench MOSFET (OptiMOS 3)
Qgd/Qgs Ratio — < 0.8 (high shot-through immunity)
Suhu Hubung Kerja — -55 C to +175 C
Paket / Case — PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free — Compliant (Pb-free plating)
FET Type — 2x N-Channel MOSFET array

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