IPD70N10S3L12ATMA1 vs BSC076N04NDATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPD70N10S3L12ATMA1 sa pamamagitan ng Infineon at BSC076N04NDATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPD70N10S3L12ATMA1 IPD70N10S3L12ATMA1 - 100V 70A OptiMOS-T MOSFET | Infineon

IPD70N10S3L12ATMA1 - 100V 70A OptiMOS-T MOSFET | Infineon

IPD70N10S3L12ATMA1 ✓ Nakahanda
Infineon
BSC076N04NDATMA1 BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPD70N10S3L12ATMA1 BSC076N04NDATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T —
Uri ng Transistor N-Channel MOSFET (Enhancement Mode) —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID, Tc) 70 A —
Pulsed Drain Current (IDM) 180 A —
Power Dissipation (Ptot, Tc) 125 W —
On-State Resistance RDS(on) typ @ VGS=10V 11.5 mΩ —
Hanay ng Temperature na Operasyon -55 °C to +175 °C (junction) —
Packhaging PG-TO252-3-11 (DPAK) —
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 3 (Drain, Gate, Source + tab) —
Level ng MSL MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) —
Automotive Qualification AEC-Q101 qualified —
Avalanche Rating 100 % avalanche tested —
Tindminan RoHS Compliant (Green Product) —
Avalanche Energy (Single Pulse) [DATA_NEEDED: EAS value] —
Series — OptiMOS 3
Configuration — Dual N-Channel (independent MOSFETs)
Drain-Source Voltage (VDS) max — 40 V
Continuous Drain Current (ID) — 20 A (Tc)
Gate Threshold Voltage (VGS(th)) — 4 V (max, typical)
On-Resistance RDS(on) max — 7.6 mOhm
Power Dissipation (Ta) — 2.3 W
Power Dissipation (Tc) — 65 W
Technology — Trench MOSFET (OptiMOS 3)
Qgd/Qgs Ratio — < 0.8 (high shot-through immunity)
Temperature ng Junction na Operasyon — -55 C to +175 C
Packhaging / Kaso — PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free — Compliant (Pb-free plating)
FET Type — 2x N-Channel MOSFET array

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