IPD78CN10NGATMA1 vs IPD90N04S403ATMA1 Perbandingan

Perbandingan bersamaan detil IPD78CN10NGATMA1 dari Infineon dan IPD90N04S403ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPD78CN10NGATMA1 IPD90N04S403ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 2 —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) Max 100 V —
Continuous Drain Current (ID) at Tc=25C 13 A —
On-Resistance RDS(on) Max at VGS=10V 78 mOhm —
Gate Threshold Voltage VGS(th) Typ [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge Qg Typ [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) Max at Tc=25C 31 W —
Operating Junction Temperature Max 175 C —
Paket / Case PG-TO252-3 (DPAK) —
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (Gate, Drain, Source) + Tab —
Lead Plating Pb-free (Matte Tin) —
RoHS Compliance Compliant Compliant (Green Package)
JEDEC Qualification Qualified per JEDEC1 for target application —
Technology OptiMOS 2 Power-Transistor Trench MOSFET (OptiMOS-T2)
Level MSL 1 (per JEDEC J-STD-020) MSL1 (peak reflow up to 260C)
Product Family — OptiMOS-T2
Channel Type — N-Channel
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D, Tc) — 90 A
On-State Resistance (R_DS(on)) — 3.2 mOhm typical at V_GS = 10 V
Maximum Power Dissipation (P_D, Tc=25C) — 94 W
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: gate threshold voltage]
Paket — PG-TO252-3-313 (DPAK)
Suhu Hubung Kerja — -55C to +175C
AEC-Q101 Qualification — Qualified (automotive grade)
Avalanche Tested — 100% avalanche-tested

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