IPD78CN10NGATMA1 vs IPD90N04S403ATMA1 比較
詳細並排比較 IPD78CN10NGATMA1 由 Infineon 與 IPD90N04S403ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPD78CN10NGATMA1 | IPD90N04S403ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 2 | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) Max | 100 V | — |
| Continuous Drain Current (ID) at Tc=25C | 13 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 78 mOhm | — |
| Gate Threshold Voltage VGS(th) Typ | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Qg Typ | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) Max at Tc=25C | 31 W | — |
| Operating Junction Temperature Max | 175 C | — |
| 封裝 / 外殼 | PG-TO252-3 (DPAK) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 3 (Gate, Drain, Source) + Tab | — |
| Lead Plating | Pb-free (Matte Tin) | — |
| RoHS Compliance | Compliant | Compliant (Green Package) |
| JEDEC Qualification | Qualified per JEDEC1 for target application | — |
| Technology | OptiMOS 2 Power-Transistor | Trench MOSFET (OptiMOS-T2) |
| MSL 等級 | 1 (per JEDEC J-STD-020) | MSL1 (peak reflow up to 260C) |
| Product Family | — | OptiMOS-T2 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, Tc) | — | 90 A |
| On-State Resistance (R_DS(on)) | — | 3.2 mOhm typical at V_GS = 10 V |
| Maximum Power Dissipation (P_D, Tc=25C) | — | 94 W |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| 封裝 | — | PG-TO252-3-313 (DPAK) |
| 工作接面溫度 | — | -55C to +175C |
| AEC-Q101 Qualification | — | Qualified (automotive grade) |
| Avalanche Tested | — | 100% avalanche-tested |