IPD90N04S403ATMA1 vs IPC70N04S5L4R2ATMA1 Perbandingan
Perbandingan bersamaan detil IPD90N04S403ATMA1 dari Infineon dan IPC70N04S5L4R2ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD90N04S403ATMA1 | IPC70N04S5L4R2ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS-T2 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, Tc) | 90 A | — |
| On-State Resistance (R_DS(on)) | 3.2 mOhm typical at V_GS = 10 V | — |
| Maximum Power Dissipation (P_D, Tc=25C) | 94 W | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Paket | PG-TO252-3-313 (DPAK) | PG-TDSON-8-34 (Surface Mount) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Hubung Kerja | -55C to +175C | — |
| Level MSL | MSL1 (peak reflow up to 260C) | MSL1 (up to 260°C peak reflow) |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| Avalanche Tested | 100% avalanche-tested | 100% (60 A production test) |
| RoHS Compliance | Compliant (Green Package) | — |
| Technology | Trench MOSFET (OptiMOS-T2) | MOSFET (Metal Oxide) |
| FET Type | — | N-Channel |
| Drain to Source Voltage (Vdss) | — | 40 V |
| Continuous Drain Current (Id) @ Tc=25°C | — | 70 A |
| Power Dissipation (Pd) @ Tc=25°C | — | 50 W |
| R_DS(on) Max @ Vgs=10V | — | 4.2 mΩ (typ) |
| Gate Threshold (Vgs(th)) | — | Logic Level (4.5 V max Rds On, Min Rds On) |
| Drive Voltage (Max Rds On, Min Rds On) | — | 4.5 V |
| Operating Temperature (Tj) | — | -55°C to +175°C |
| Automotive Qualification | — | AEC-Q101 |
| Status RoHS | — | Compliant (Green Product) |
| Configuration | — | Single with Built-in Diode |
| Case Connection | — | DRAIN |