IPD90N04S403ATMA1 vs IPC70N04S5L4R2ATMA1 مقایسه
مقایسه دقیق کنار به کنار IPD90N04S403ATMA1 توسط Infineon و IPC70N04S5L4R2ATMA1 توسط Infineon. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
مقایسه مشخصات
| پارامتر | IPD90N04S403ATMA1 | IPC70N04S5L4R2ATMA1 |
|---|---|---|
| برند | Infineon | Infineon |
| دسته‌بندی | MOSFETs | MOSFETs |
| وضعیت چرخه عمر | فعال | فعال |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS-T2 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, Tc) | 90 A | — |
| On-State Resistance (R_DS(on)) | 3.2 mOhm typical at V_GS = 10 V | — |
| Maximum Power Dissipation (P_D, Tc=25C) | 94 W | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| بسته‌بندی | PG-TO252-3-313 (DPAK) | PG-TDSON-8-34 (Surface Mount) |
| نوع نصب | Surface Mount | Surface Mount |
| دمای اتصال کاری | -55C to +175C | — |
| سطح MSL | MSL1 (peak reflow up to 260C) | MSL1 (up to 260°C peak reflow) |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| Avalanche Tested | 100% avalanche-tested | 100% (60 A production test) |
| RoHS Compliance | Compliant (Green Package) | — |
| Technology | Trench MOSFET (OptiMOS-T2) | MOSFET (Metal Oxide) |
| FET Type | — | N-Channel |
| Drain to Source Voltage (Vdss) | — | 40 V |
| Continuous Drain Current (Id) @ Tc=25°C | — | 70 A |
| Power Dissipation (Pd) @ Tc=25°C | — | 50 W |
| R_DS(on) Max @ Vgs=10V | — | 4.2 mΩ (typ) |
| Gate Threshold (Vgs(th)) | — | Logic Level (4.5 V max Rds On, Min Rds On) |
| Drive Voltage (Max Rds On, Min Rds On) | — | 4.5 V |
| Operating Temperature (Tj) | — | -55°C to +175°C |
| Automotive Qualification | — | AEC-Q101 |
| وضعیت RoHS | — | Compliant (Green Product) |
| Configuration | — | Single with Built-in Diode |
| Case Connection | — | DRAIN |