IPD90N04S403ATMA1 vs IPD50N04S408ATMA1 Perbandingan
Perbandingan bersamaan detil IPD90N04S403ATMA1 dari Infineon dan IPD50N04S408ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD90N04S403ATMA1 | IPD50N04S408ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T2 | OptiMOS-T2 |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, Tc) | 90 A | — |
| On-State Resistance (R_DS(on)) | 3.2 mOhm typical at V_GS = 10 V | — |
| Maximum Power Dissipation (P_D, Tc=25C) | 94 W | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Paket | PG-TO252-3-313 (DPAK) | PG-TO252-3-313 (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Hubung Kerja | -55C to +175C | — |
| Level MSL | MSL1 (peak reflow up to 260C) | MSL1 (260 °C peak reflow) |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| Avalanche Tested | 100% avalanche-tested | 100 % Avalanche tested |
| RoHS Compliance | Compliant (Green Package) | — |
| Technology | Trench MOSFET (OptiMOS-T2) | — |
| Polarity | — | N-Channel |
| Mode | — | Enhancement-mode |
| Drain-Source Voltage (V DS) | — | 40 V |
| Continuous Drain Current (I D, Tc) | — | 50 A |
| Power Dissipation (P D, Tc) | — | 46 W |
| Rentang Suhu Kerja | — | -55 °C to +175 °C |
| Automotive Qualification | — | AEC-Q101 |
| Green Package (RoHS) | — | RoHS compliant |
| Gate Threshold Voltage (V GS(th)) | — | [DATA_NEEDED: V GS(th) typical] |
| On-State Resistance (R DS(on)) | — | [DATA_NEEDED: R DS(on) at V GS = 10 V] |
| Total Gate Charge (Q G) | — | [DATA_NEEDED: Q G typical] |