IPD90N04S403ATMA1 vs IPD50N04S408ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD90N04S403ATMA1 disebabkan oleh Infineon dan IPD50N04S408ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPD90N04S403ATMA1 | IPD50N04S408ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T2 | OptiMOS-T2 |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, Tc) | 90 A | — |
| On-State Resistance (R_DS(on)) | 3.2 mOhm typical at V_GS = 10 V | — |
| Maximum Power Dissipation (P_D, Tc=25C) | 94 W | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Kemasan | PG-TO252-3-313 (DPAK) | PG-TO252-3-313 (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Hubungan Operasi | -55C to +175C | — |
| Aras MSL | MSL1 (peak reflow up to 260C) | MSL1 (260 °C peak reflow) |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| Avalanche Tested | 100% avalanche-tested | 100 % Avalanche tested |
| RoHS Compliance | Compliant (Green Package) | — |
| Technology | Trench MOSFET (OptiMOS-T2) | — |
| Polarity | — | N-Channel |
| Mode | — | Enhancement-mode |
| Drain-Source Voltage (V DS) | — | 40 V |
| Continuous Drain Current (I D, Tc) | — | 50 A |
| Power Dissipation (P D, Tc) | — | 46 W |
| Gambaran Suhu Operasi | — | -55 °C to +175 °C |
| Automotive Qualification | — | AEC-Q101 |
| Green Package (RoHS) | — | RoHS compliant |
| Gate Threshold Voltage (V GS(th)) | — | [DATA_NEEDED: V GS(th) typical] |
| On-State Resistance (R DS(on)) | — | [DATA_NEEDED: R DS(on) at V GS = 10 V] |
| Total Gate Charge (Q G) | — | [DATA_NEEDED: Q G typical] |