IPD90N04S403ATMA1 vs IPD50N04S408ATMA1 Comparison

Detailed side-by-side comparison of IPD90N04S403ATMA1 by Infineon and IPD50N04S408ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPD90N04S403ATMA1 IPD90N04S403ATMA1 - 40V 90A N-Ch OptiMOS-T2 MOSFET | Infineon

IPD90N04S403ATMA1 - 40V 90A N-Ch OptiMOS-T2 MOSFET | Infineon

IPD90N04S403ATMA1 βœ“ Active
Infineon
IPD50N04S408ATMA1 IPD50N04S408ATMA1 - 40V 50A N-Ch OptiMOS-T2 MOSFET | Infineon

IPD50N04S408ATMA1 - 40V 50A N-Ch OptiMOS-T2 MOSFET | Infineon

IPD50N04S408ATMA1 βœ“ Active

Specification Comparison

Parameter IPD90N04S403ATMA1 IPD50N04S408ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.05 $0.69
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T2 OptiMOS-T2
Channel Type N-Channel β€”
Drain-Source Voltage (V_DS) 40 V β€”
Continuous Drain Current (I_D, Tc) 90 A β€”
On-State Resistance (R_DS(on)) 3.2 mOhm typical at V_GS = 10 V β€”
Maximum Power Dissipation (P_D, Tc=25C) 94 W β€”
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: gate threshold voltage] β€”
Package PG-TO252-3-313 (DPAK) PG-TO252-3-313 (DPAK)
Mounting Type Surface Mount Surface Mount
Operating Junction Temperature -55C to +175C β€”
MSL Level MSL1 (peak reflow up to 260C) MSL1 (260 Β°C peak reflow)
AEC-Q101 Qualification Qualified (automotive grade) β€”
Avalanche Tested 100% avalanche-tested 100 % Avalanche tested
RoHS Compliance Compliant (Green Package) β€”
Technology Trench MOSFET (OptiMOS-T2) β€”
Polarity β€” N-Channel
Mode β€” Enhancement-mode
Drain-Source Voltage (V DS) β€” 40 V
Continuous Drain Current (I D, Tc) β€” 50 A
Power Dissipation (P D, Tc) β€” 46 W
Operating Temperature Range β€” -55 Β°C to +175 Β°C
Automotive Qualification β€” AEC-Q101
Green Package (RoHS) β€” RoHS compliant
Gate Threshold Voltage (V GS(th)) β€” [DATA_NEEDED: V GS(th) typical]
On-State Resistance (R DS(on)) β€” [DATA_NEEDED: R DS(on) at V GS = 10 V]
Total Gate Charge (Q G) β€” [DATA_NEEDED: Q G typical]

Datasheets & Resources

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