IPD90P04P405ATMA2 vs IPD50P04P413ATMA2 Perbandingan
Perbandingan bersamaan detil IPD90P04P405ATMA2 dari Infineon dan IPD50P04P413ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPD90P04P405ATMA2 | IPD50P04P413ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -40 V | -40 V |
| Continuous Drain Current (ID, Tc) | -90 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed IDM] |
| Power Dissipation (PD, Tc) | 125 W | — |
| On-Resistance RDS(on) at VGS = -10 V | 4.7 mΩ (typical) | — |
| Gate-Source Voltage (VGS) max | ±20 V | ±20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) range] | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Rentang Suhu Kerja | -55 °C to +175 °C (Tj) | -55 °C to +175 °C |
| Paket | PG-TO252-3-313 (DPAK, surface mount) | PG-TO252-3-313 (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 3 (Gate, Drain, Source) | — |
| Process Technology | OptiMOS-P2 (trench + field plate) | — |
| Level MSL | 1 (per JEDEC J-STD-020) | 1 |
| Status RoHS | Compliant | Compliant |
| Polarity / Device Type | — | P-Channel MOSFET |
| Technology | — | OptiMOS-P2 (Trench) |
| Continuous Drain Current (TC=25°C, ID) | — | 50 A |
| Continuous Drain Current (TC=100°C, ID) | — | [DATA_NEEDED: ID @ 100°C] |
| Power Dissipation (TC=25°C, Ptot) | — | 58 W |
| On-State Resistance (RDS(on)) @ VGS=-10V | — | 9.2 mΩ (typ) / 12.6 mΩ (max) |
| On-State Resistance (RDS(on)) @ VGS=-4.5V | — | [DATA_NEEDED: RDS(on) @ VGS=-4.5V] |
| Maximum Junction Temperature (TJ,max) | — | 175 °C |
| Standard Pack Quantity (13" reel) | — | 2500 pcs |
| Automotive Qualification | — | AEC-Q101 qualified |