IPD90P04P405ATMA2 vs IPD50P04P413ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD90P04P405ATMA2 disebabkan oleh Infineon dan IPD50P04P413ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPD90P04P405ATMA2 IPD50P04P413ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel —
Drain-Source Voltage (VDS) -40 V -40 V
Continuous Drain Current (ID, Tc) -90 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed IDM]
Power Dissipation (PD, Tc) 125 W —
On-Resistance RDS(on) at VGS = -10 V 4.7 mΩ (typical) —
Gate-Source Voltage (VGS) max ±20 V ±20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range] [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Gambaran Suhu Operasi -55 °C to +175 °C (Tj) -55 °C to +175 °C
Kemasan PG-TO252-3-313 (DPAK, surface mount) PG-TO252-3-313 (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 (Gate, Drain, Source) —
Process Technology OptiMOS-P2 (trench + field plate) —
Aras MSL 1 (per JEDEC J-STD-020) 1
Status RoHS Compliant Compliant
Polarity / Device Type — P-Channel MOSFET
Technology — OptiMOS-P2 (Trench)
Continuous Drain Current (TC=25°C, ID) — 50 A
Continuous Drain Current (TC=100°C, ID) — [DATA_NEEDED: ID @ 100°C]
Power Dissipation (TC=25°C, Ptot) — 58 W
On-State Resistance (RDS(on)) @ VGS=-10V — 9.2 mΩ (typ) / 12.6 mΩ (max)
On-State Resistance (RDS(on)) @ VGS=-4.5V — [DATA_NEEDED: RDS(on) @ VGS=-4.5V]
Maximum Junction Temperature (TJ,max) — 175 °C
Standard Pack Quantity (13" reel) — 2500 pcs
Automotive Qualification — AEC-Q101 qualified

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