IPG16N10S4L61AATMA1 vs IPC100N04S5L1R5ATMA1 Perbandingan

Perbandingan bersamaan detil IPG16N10S4L61AATMA1 dari Infineon dan IPC100N04S5L1R5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPC100N04S5L1R5ATMA1 IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon

IPC100N04S5L1R5ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPG16N10S4L61AATMA1 IPC100N04S5L1R5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type Dual N-Channel (Array) —
Technology Logic-Level, Enhancement Mode —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at 25C 16 A —
Power Dissipation (PD) 29 W —
Paket / Case PG-TDSON-8-10 (Wettable Flank) —
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -55C to +175C (TJ) —
Tingkat Sensitivitas Kekeringan (MSL) MSL1 (unlimited floor life at <30C / 85% RH) —
Peak Reflow Temperature 260 C —
AEC-Q101 Qualification Qualified (automotive grade) —
RoHS Compliance Compliant (Green Product) —
Avalanche Tested 100% (per datasheet) 100%
AOI Compatible Yes (Wettable Flank) —
FET Feature Logic Level Gate —
Manufacturer — Infineon Technologies
Product Family — OptiMOS-5 40 V
Polarity / Channel Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) Max — 40 V
Gate-Source Voltage (VGS) Max — 20 V
Continuous Drain Current (ID) at Tc=25C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
Power Dissipation (PD) at Tc=25C — 115 W
On-Resistance RDS(on) at VGS=10 V — 1.5 mOhm (typ)
On-Resistance RDS(on) at VGS=4.5 V — 1.8 mOhm (typ)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ]
Rentang Suhu Kerja — -55C to +175C
Paket — PG-TDSON-8-34 (SS08 leadless)
Level MSL — MSL1 (260C peak reflow)
AEC-Q101 Qualified — Yes
Status RoHS — Compliant (Green Product)

Spek dan Sumber

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