IPG20N04S408ATMA1 vs IPG20N06S2L65AATMA1 Perbandingan
Perbandingan bersamaan detil IPG20N04S408ATMA1 dari Infineon dan IPG20N06S2L65AATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPG20N04S408ATMA1 | IPG20N06S2L65AATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | Dual N-Channel | Dual N-Channel (Half Bridge / Independent) |
| Technology | OptiMOS (trench MOSFET) | OptiMOS Trench MOSFET |
| Drain-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D, per channel) | 20 A at 25 degC case | — |
| R_DS(on) max @ V_GS=10V | 7.6 mOhm | — |
| Maximum Power Dissipation (P_D) | 65 W | — |
| Suhu Hubung Kerja | -55 degC to +175 degC | — |
| Paket | PG-TDSON-8-4 (SuperSO8 dual) | PG-TDSON-8-10 (TDSON-8 EP, wettable flank) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | MSL1 (260 degC peak reflow) | MSL1 (peak reflow 260 C) |
| AEC-Q101 Qualified | Yes | — |
| Status RoHS | Compliant (Green Product) | Compliant (Green Product) |
| Avalanche Rated | 100 percent tested | — |
| Channel Count | 2 (independent) | — |
| Operating Mode | Enhancement mode, Normal Level | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) | — | 20 A (per channel) |
| Power Dissipation (PD) | — | 43 W |
| Gate Threshold (VGS(th)) | — | Logic-Level |
| Suhu Kerja | — | -55 C to +175 C |
| AEC-Q101 Qualification | — | Yes |
| Avalanche Tested | — | 100% (per datasheet) |
| AOI Compatible | — | Yes (wettable flank) |