IPG20N04S4L08AATMA1 vs IPC50N04S5L5R5ATMA1 Perbandingan

Perbandingan bersamaan detil IPG20N04S4L08AATMA1 dari Infineon dan IPC50N04S5L5R5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPG20N04S4L08AATMA1 IPG20N04S4L08AATMA1 - Dual N-Ch 40V 8.2mΩ MOSFET | Infineon

IPG20N04S4L08AATMA1 - Dual N-Ch 40V 8.2mΩ MOSFET | Infineon

IPG20N04S4L08AATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPG20N04S4L08AATMA1 IPC50N04S5L5R5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type Dual N-Channel —
Technology OptiMOS-T2 (Logic Level) —
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) @ TC=25°C 20 A (per channel) —
On-Resistance R<sub>DS(on)</sub> max @ VGS=10V 8.2 mΩ —
Gate Threshold Voltage V<sub>GS(th)</sub> typ 1.7 V —
Gate Drive (Logic Level) 4.5 V —
Power Dissipation (PD) @ TC=25°C 54 W —
Suhu Hubung Kerja -55°C to +175°C —
Paket PG-TDSON-8-10 (Wettable Flank) PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad)
Tipe Mounting Surface Mount Surface Mount
AEC-Q101 Qualification Yes Qualified (automotive grade)
Peak Reflow Temperature 260°C 260 °C
Avalanche Rated Yes (100% tested) —
RoHS / REACH Compliant (Green Product) RoHS Compliant (Green Product)
AOI Compatible Yes (Wettable Flank) —
Tipe Transistor — N-Channel MOSFET
Mode — Enhancement Mode
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc) — 50 A
Maximum Drain Current (silicon-limited, 25 °C) — 60 A
On-Resistance RDS(on) max @ VGS=10 V — 5.5 mΩ
Gate Threshold VGS(th) — Logic Level (enhancement at ≤ 4.5 V VGS)
Power Dissipation (Tc) — 42 W
Thermal Resistance Junction-to-Case RthJC — 3.6 K/W
Rentang Suhu Kerja — -55 °C to +175 °C
MSL (Moisture Sensitivity Level) — MSL1
Avalanche Rating — 100 % Avalanche Tested

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