IPG20N04S4L08AATMA1 vs IPC50N04S5L5R5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPG20N04S4L08AATMA1 disebabkan oleh Infineon dan IPC50N04S5L5R5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPG20N04S4L08AATMA1 IPG20N04S4L08AATMA1 - Dual N-Ch 40V 8.2mΩ MOSFET | Infineon

IPG20N04S4L08AATMA1 - Dual N-Ch 40V 8.2mΩ MOSFET | Infineon

IPG20N04S4L08AATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPG20N04S4L08AATMA1 IPC50N04S5L5R5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type Dual N-Channel —
Technology OptiMOS-T2 (Logic Level) —
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) @ TC=25°C 20 A (per channel) —
On-Resistance R<sub>DS(on)</sub> max @ VGS=10V 8.2 mΩ —
Gate Threshold Voltage V<sub>GS(th)</sub> typ 1.7 V —
Gate Drive (Logic Level) 4.5 V —
Power Dissipation (PD) @ TC=25°C 54 W —
Suhu Hubungan Operasi -55°C to +175°C —
Kemasan PG-TDSON-8-10 (Wettable Flank) PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad)
Jenis Pemasangan Surface Mount Surface Mount
AEC-Q101 Qualification Yes Qualified (automotive grade)
Peak Reflow Temperature 260°C 260 °C
Avalanche Rated Yes (100% tested) —
RoHS / REACH Compliant (Green Product) RoHS Compliant (Green Product)
AOI Compatible Yes (Wettable Flank) —
Jenis Transistor — N-Channel MOSFET
Mode — Enhancement Mode
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc) — 50 A
Maximum Drain Current (silicon-limited, 25 °C) — 60 A
On-Resistance RDS(on) max @ VGS=10 V — 5.5 mΩ
Gate Threshold VGS(th) — Logic Level (enhancement at ≤ 4.5 V VGS)
Power Dissipation (Tc) — 42 W
Thermal Resistance Junction-to-Case RthJC — 3.6 K/W
Gambaran Suhu Operasi — -55 °C to +175 °C
MSL (Moisture Sensitivity Level) — MSL1
Avalanche Rating — 100 % Avalanche Tested

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