IPG20N10S4L35AATMA1 vs IPC50N04S5L5R5ATMA1 Perbandingan

Perbandingan bersamaan detil IPG20N10S4L35AATMA1 dari Infineon dan IPC50N04S5L5R5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPG20N10S4L35AATMA1 IPG20N10S4L35AATMA1 - 100V Dual N-Ch 20A MOSFET | Infineon

IPG20N10S4L35AATMA1 - 100V Dual N-Ch 20A MOSFET | Infineon

IPG20N10S4L35AATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPG20N10S4L35AATMA1 IPC50N04S5L5R5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type Dual N-Channel (2 independent N-MOSFETs) —
Technology OptiMOS™ trench MOSFET, logic-level —
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) @ TC=25°C 20 A (per channel) —
RDS(on) Max @ VGS=10 V, ID=17 A 35 mΩ —
Gate Threshold (VGS(th)) Logic-level (typ. 1.7 V, fully enhanced at 4.5 V) —
Power Dissipation (PD) @ TC=25°C 43 W —
Rentang Suhu Kerja -55°C to +175°C (TJ) -55 °C to +175 °C
Paket PG-TDSON-8-10 (TDSON EP, wettable flank) PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad)
Tipe Mounting Surface Mount Surface Mount
Avalanche Rating 100% avalanche tested 100 % Avalanche Tested
AEC-Q101 Qualification Yes (automotive grade) Qualified (automotive grade)
RoHS Compliance Yes (Green Product) —
Level MSL [DATA_NEEDED: MSL rating] —
Drain Connection Exposed pad (EP) tied to drain —
Tipe Transistor — N-Channel MOSFET
Mode — Enhancement Mode
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc) — 50 A
Maximum Drain Current (silicon-limited, 25 °C) — 60 A
On-Resistance RDS(on) max @ VGS=10 V — 5.5 mΩ
Gate Threshold VGS(th) — Logic Level (enhancement at ≤ 4.5 V VGS)
Power Dissipation (Tc) — 42 W
Thermal Resistance Junction-to-Case RthJC — 3.6 K/W
MSL (Moisture Sensitivity Level) — MSL1
Peak Reflow Temperature — 260 °C
RoHS / REACH — RoHS Compliant (Green Product)

Spek dan Sumber

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