IPG20N10S4L35AATMA1 vs IPC50N04S5L5R5ATMA1 比較
詳細並排比較 IPG20N10S4L35AATMA1 由 Infineon 與 IPC50N04S5L5R5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 ✓ 啟用中規格比較
| 參數 | IPG20N10S4L35AATMA1 | IPC50N04S5L5R5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | Dual N-Channel (2 independent N-MOSFETs) | — |
| Technology | OptiMOS™ trench MOSFET, logic-level | — |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) @ TC=25°C | 20 A (per channel) | — |
| RDS(on) Max @ VGS=10 V, ID=17 A | 35 mΩ | — |
| Gate Threshold (VGS(th)) | Logic-level (typ. 1.7 V, fully enhanced at 4.5 V) | — |
| Power Dissipation (PD) @ TC=25°C | 43 W | — |
| 工作溫度範圍 | -55°C to +175°C (TJ) | -55 °C to +175 °C |
| 封裝 | PG-TDSON-8-10 (TDSON EP, wettable flank) | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) |
| 安裝類型 | Surface Mount | Surface Mount |
| Avalanche Rating | 100% avalanche tested | 100 % Avalanche Tested |
| AEC-Q101 Qualification | Yes (automotive grade) | Qualified (automotive grade) |
| RoHS Compliance | Yes (Green Product) | — |
| MSL 等級 | [DATA_NEEDED: MSL rating] | — |
| Drain Connection | Exposed pad (EP) tied to drain | — |
| 電晶體類型 | — | N-Channel MOSFET |
| Mode | — | Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc) | — | 50 A |
| Maximum Drain Current (silicon-limited, 25 °C) | — | 60 A |
| On-Resistance RDS(on) max @ VGS=10 V | — | 5.5 mΩ |
| Gate Threshold VGS(th) | — | Logic Level (enhancement at ≤ 4.5 V VGS) |
| Power Dissipation (Tc) | — | 42 W |
| Thermal Resistance Junction-to-Case RthJC | — | 3.6 K/W |
| MSL (Moisture Sensitivity Level) | — | MSL1 |
| Peak Reflow Temperature | — | 260 °C |
| RoHS / REACH | — | RoHS Compliant (Green Product) |