IPG20N10S4L35AATMA1 vs IPC50N04S5L5R5ATMA1 Comparison
Detailed side-by-side comparison of IPG20N10S4L35AATMA1 by Infineon and IPC50N04S5L5R5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPG20N10S4L35AATMA1
IPG20N10S4L35AATMA1 - 100V Dual N-Ch 20A MOSFET | Infineon
IPG20N10S4L35AATMA1 β ActiveInfineon
IPC50N04S5L5R5ATMA1
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΞ© OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 β ActiveSpecification Comparison
| Parameter | IPG20N10S4L35AATMA1 | IPC50N04S5L5R5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.98 | $0.36 |
| FET Type | Dual N-Channel (2 independent N-MOSFETs) | β |
| Technology | OptiMOSβ’ trench MOSFET, logic-level | β |
| Drain-to-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) @ TC=25Β°C | 20 A (per channel) | β |
| RDS(on) Max @ VGS=10 V, ID=17 A | 35 mΞ© | β |
| Gate Threshold (VGS(th)) | Logic-level (typ. 1.7 V, fully enhanced at 4.5 V) | β |
| Power Dissipation (PD) @ TC=25Β°C | 43 W | β |
| Operating Temperature Range | -55Β°C to +175Β°C (TJ) | -55 Β°C to +175 Β°C |
| Package | PG-TDSON-8-10 (TDSON EP, wettable flank) | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Avalanche Rating | 100% avalanche tested | 100 % Avalanche Tested |
| AEC-Q101 Qualification | Yes (automotive grade) | Qualified (automotive grade) |
| RoHS Compliance | Yes (Green Product) | β |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Drain Connection | Exposed pad (EP) tied to drain | β |
| Transistor Type | β | N-Channel MOSFET |
| Mode | β | Enhancement Mode |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID, Tc) | β | 50 A |
| Maximum Drain Current (silicon-limited, 25 Β°C) | β | 60 A |
| On-Resistance RDS(on) max @ VGS=10 V | β | 5.5 mΞ© |
| Gate Threshold VGS(th) | β | Logic Level (enhancement at β€ 4.5 V VGS) |
| Power Dissipation (Tc) | β | 42 W |
| Thermal Resistance Junction-to-Case RthJC | β | 3.6 K/W |
| MSL (Moisture Sensitivity Level) | β | MSL1 |
| Peak Reflow Temperature | β | 260 Β°C |
| RoHS / REACH | β | RoHS Compliant (Green Product) |