IPL60R060CFD7AUMA1 vs IPD60R600P7ATMA1 Perbandingan

Perbandingan bersamaan detil IPL60R060CFD7AUMA1 dari Infineon dan IPD60R600P7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPD60R600P7ATMA1 IPD60R600P7ATMA1 - 600V 6A CoolMOS P7 MOSFET | Infineon

IPD60R600P7ATMA1 - 600V 6A CoolMOS P7 MOSFET | Infineon

IPD60R600P7ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPL60R060CFD7AUMA1 IPD60R600P7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS™ CFD7 CoolMOS P7
Tipe Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (V_DS) 600 V —
Continuous Drain Current (I_D, Tc) 40 A —
Power Dissipation (P_D, Tc) 219 W —
R_DS(on) (max) at V_GS = 10 V 60 mΩ —
R_DS(on) (typ, datasheet) 48 mΩ —
Gate Charge (Q_G, typ) at V_GS = 10 V 79 nC —
Input Capacitance (C_iss) 3193 pF —
Output Capacitance (C_oss) 62 pF —
Gate-Source Voltage (V_GS) ±20 V (max) —
Gate Threshold Voltage (V_GS(th), typ) 4.5 V —
Rentang Suhu Kerja -40 °C to +150 °C -55C to +150C (TJ)
Paket PG-VSON-4-1 (Surface Mount) —
Tipe Mounting Surface Mount Surface Mount
Level MSL [DATA_NEEDED: MSL Level] 1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Part Number — IPD60R600P7ATMA1
Technology — Superjunction (SJ) / CoolMOS
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID, TC) — 6 A
On-Resistance (RDS(on)) — 490 mOhm (max)
Power Dissipation (PD, TC) — 30 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Paket / Case — PG-TO252-3 (DPAK), surface mount
Generation — CoolMOS 7th generation (P7, successor to P6)
Ordering Code Suffix — ATMA1 = Tape & Reel, 13-inch

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