IPL60R105P7AUMA1 vs BSC097N06NSATMA1 Perbandingan

Perbandingan bersamaan detil IPL60R105P7AUMA1 dari Infineon dan BSC097N06NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPL60R105P7AUMA1 BSC097N06NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 OptiMOS 5
Technology Superjunction (SJ) N-Channel Power MOSFET OptiMOS 5 (Trench)
Drain-Source Voltage (VDS) 600 V —
On-Resistance (RDS(on)) max 105 mΩ —
Continuous Drain Current (ID) at Tc 33 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: IDM peak value]
Power Dissipation (Ptot) at Tc 137 W —
Gate Threshold Voltage (VGS(th)) typ 3.5 V —
Gate Charge (Qg) typ 45 nC —
Rentang Suhu Kerja -55C to +150C —
Paket PG-VSON-4 (4-pin SMD with exposed pad) —
Tipe Mounting Surface Mount Surface Mount
Channel Type N-Channel —
Level MSL [DATA_NEEDED: MSL rating] 1 (Unlimited)
Status RoHS Compliant Compliant
Bebas Halogen Yes —
Lead-Free Yes —
Part Status — Active
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Tc=25C — 46 A
Continuous Drain Current (ID) at Ta=25C — [DATA_NEEDED: ID at Ta=25C PCB-mounted]
RDS(on) max at VGS=10 V — 9.7 mOhm
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical value]
Gate Charge (Qg typ) — [DATA_NEEDED: total gate charge Qg]
Power Dissipation at Ta=25C — 2.5 W
Power Dissipation at Tc=25C — 36 W
Suhu Hubung Kerja — -55C to +150C
Paket / Case — PG-TDSON-8-6 (SuperSO8 5x6 mm)
Avalanche Rated — Yes (EAS per datasheet)

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