IPL60R105P7AUMA1 vs BSC097N06NSATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPL60R105P7AUMA1 sa pamamagitan ng Infineon at BSC097N06NSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IPL60R105P7AUMA1 | BSC097N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | OptiMOS 5 |
| Technology | Superjunction (SJ) N-Channel Power MOSFET | OptiMOS 5 (Trench) |
| Drain-Source Voltage (VDS) | 600 V | — |
| On-Resistance (RDS(on)) max | 105 mΩ | — |
| Continuous Drain Current (ID) at Tc | 33 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: IDM peak value] |
| Power Dissipation (Ptot) at Tc | 137 W | — |
| Gate Threshold Voltage (VGS(th)) typ | 3.5 V | — |
| Gate Charge (Qg) typ | 45 nC | — |
| Hanay ng Temperature na Operasyon | -55C to +150C | — |
| Packhaging | PG-VSON-4 (4-pin SMD with exposed pad) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Level ng MSL | [DATA_NEEDED: MSL rating] | 1 (Unlimited) |
| Tindminan RoHS | Compliant | Compliant |
| Wala sa Halogen | Yes | — |
| Lead-Free | Yes | — |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tc=25C | — | 46 A |
| Continuous Drain Current (ID) at Ta=25C | — | [DATA_NEEDED: ID at Ta=25C PCB-mounted] |
| RDS(on) max at VGS=10 V | — | 9.7 mOhm |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg typ) | — | [DATA_NEEDED: total gate charge Qg] |
| Power Dissipation at Ta=25C | — | 2.5 W |
| Power Dissipation at Tc=25C | — | 36 W |
| Temperature ng Junction na Operasyon | — | -55C to +150C |
| Packhaging / Kaso | — | PG-TDSON-8-6 (SuperSO8 5x6 mm) |
| Avalanche Rated | — | Yes (EAS per datasheet) |