IPL60R105P7AUMA1 vs IPL60R065P7AUMA1 Perbandingan

Perbandingan bersamaan detil IPL60R105P7AUMA1 dari Infineon dan IPL60R065P7AUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPL60R105P7AUMA1 IPL60R065P7AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 —
Technology Superjunction (SJ) N-Channel Power MOSFET —
Drain-Source Voltage (VDS) 600 V —
On-Resistance (RDS(on)) max 105 mΩ —
Continuous Drain Current (ID) at Tc 33 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (Ptot) at Tc 137 W —
Gate Threshold Voltage (VGS(th)) typ 3.5 V —
Gate Charge (Qg) typ 45 nC —
Rentang Suhu Kerja -55C to +150C -55 °C to +150 °C (T<sub>j</sub>)
Paket PG-VSON-4 (4-pin SMD with exposed pad) PG-VSON-4 (surface mount with exposed pad)
Tipe Mounting Surface Mount Surface Mount
Channel Type N-Channel N-Channel
Level MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Bebas Halogen Yes Yes
Lead-Free Yes —
Technology Family — CoolMOS™ P7 (superjunction)
Drain-Source Voltage (V<sub>DS</sub>) — 600 V
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25 °C) — 41 A
On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) — 65 mΩ (max)
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25 °C) — 201 W
Gate Threshold Voltage (V<sub>GS(th)</sub>) — 3.5 V
Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=400 V) — 2895 pF
Rise Time (t<sub>r</sub>) — 7 ns
Fall Time (t<sub>f</sub>) — 4 ns
Jumlah Pin — 4
Polarity — Single N-channel
Drain to Source Voltage — 650 V (rating per AiEMA spec)
R<sub>DS(on)</sub> (max, V<sub>GS</sub>=10 V, T<sub>j</sub>=25 °C) — 0.053 Ω

Spek dan Sumber

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