IPL60R105P7AUMA1 vs IPL60R065P7AUMA1 比較
詳細並排比較 IPL60R105P7AUMA1 由 Infineon 與 IPL60R065P7AUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 ✓ 啟用中規格比較
| 參數 | IPL60R105P7AUMA1 | IPL60R065P7AUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | — |
| Technology | Superjunction (SJ) N-Channel Power MOSFET | — |
| Drain-Source Voltage (VDS) | 600 V | — |
| On-Resistance (RDS(on)) max | 105 mΩ | — |
| Continuous Drain Current (ID) at Tc | 33 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (Ptot) at Tc | 137 W | — |
| Gate Threshold Voltage (VGS(th)) typ | 3.5 V | — |
| Gate Charge (Qg) typ | 45 nC | — |
| 工作溫度範圍 | -55C to +150C | -55 °C to +150 °C (T<sub>j</sub>) |
| 封裝 | PG-VSON-4 (4-pin SMD with exposed pad) | PG-VSON-4 (surface mount with exposed pad) |
| 安裝類型 | Surface Mount | Surface Mount |
| Channel Type | N-Channel | N-Channel |
| MSL 等級 | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| RoHS 狀態 | Compliant | Compliant |
| 無鹵素 | Yes | Yes |
| Lead-Free | Yes | — |
| Technology Family | — | CoolMOS™ P7 (superjunction) |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 600 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25 °C) | — | 41 A |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | — | 65 mΩ (max) |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25 °C) | — | 201 W |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | — | 3.5 V |
| Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=400 V) | — | 2895 pF |
| Rise Time (t<sub>r</sub>) | — | 7 ns |
| Fall Time (t<sub>f</sub>) | — | 4 ns |
| 腳位數 | — | 4 |
| Polarity | — | Single N-channel |
| Drain to Source Voltage | — | 650 V (rating per AiEMA spec) |
| R<sub>DS(on)</sub> (max, V<sub>GS</sub>=10 V, T<sub>j</sub>=25 °C) | — | 0.053 Ω |