IPL60R125P7AUMA1 vs IPL60R105P7AUMA1 Perbandingan

Perbandingan bersamaan detil IPL60R125P7AUMA1 dari Infineon dan IPL60R105P7AUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPL60R125P7AUMA1 IPL60R105P7AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS P7 —
Technology Superjunction (SJ) N-channel MOSFET Superjunction (SJ) N-Channel Power MOSFET
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID, Tc=25C) 27 A —
On-State Resistance RDS(on) max 125 mOhm —
Gate Charge (Qg, typ) 36 nC —
Total Gate Charge Qg (typ) 36 nC —
Output Capacitance Coss (typ) [DATA_NEEDED: Coss value] —
Reverse Recovery Charge Qrr [DATA_NEEDED: Qrr] —
Rise Time / Fall Time (tr/tf) [DATA_NEEDED: tr/tf] —
Gate-Source Voltage (VGS) +/-20 V (max) —
Gate Threshold Voltage VGS(th), typ 3.5 V —
Avalanche Energy (EAS) [DATA_NEEDED: EAS] —
Suhu Hubung Kerja -55 C to +150 C —
Paket ThinPAK 8x8 (4-pin + exposed pad) PG-VSON-4 (4-pin SMD with exposed pad)
Tipe Mounting Surface Mount Surface Mount
Tingkat Sensitivitas Kekeringan (MSL) MSL 2 (per JEDEC J-STD-020) —
Status RoHS Compliant Compliant
Pin Configuration Drain Pin 5, Gate Pin 1, Power Source Pin 3-4, Driver Source Pin 2 —
Series — CoolMOS P7
On-Resistance (RDS(on)) max — 105 mΩ
Continuous Drain Current (ID) at Tc — 33 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (Ptot) at Tc — 137 W
Gate Threshold Voltage (VGS(th)) typ — 3.5 V
Gate Charge (Qg) typ — 45 nC
Rentang Suhu Kerja — -55C to +150C
Channel Type — N-Channel
Level MSL — [DATA_NEEDED: MSL rating]
Bebas Halogen — Yes
Lead-Free — Yes

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