IPL60R125P7AUMA1 vs IPL60R105P7AUMA1 Comparison
Detailed side-by-side comparison of IPL60R125P7AUMA1 by Infineon and IPL60R105P7AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPL60R125P7AUMA1
IPL60R125P7AUMA1 - 600V CoolMOS P7 MOSFET 125mΞ© 27A | Infineon
IPL60R125P7AUMA1 β ActiveInfineon
IPL60R105P7AUMA1
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΞ© N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 β ActiveSpecification Comparison
| Parameter | IPL60R125P7AUMA1 | IPL60R105P7AUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.95 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 | β |
| Technology | Superjunction (SJ) N-channel MOSFET | Superjunction (SJ) N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25C) | 27 A | β |
| On-State Resistance RDS(on) max | 125 mOhm | β |
| Gate Charge (Qg, typ) | 36 nC | β |
| Total Gate Charge Qg (typ) | 36 nC | β |
| Output Capacitance Coss (typ) | [DATA_NEEDED: Coss value] | β |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr] | β |
| Rise Time / Fall Time (tr/tf) | [DATA_NEEDED: tr/tf] | β |
| Gate-Source Voltage (VGS) | +/-20 V (max) | β |
| Gate Threshold Voltage VGS(th), typ | 3.5 V | β |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS] | β |
| Operating Junction Temperature | -55 C to +150 C | β |
| Package | ThinPAK 8x8 (4-pin + exposed pad) | PG-VSON-4 (4-pin SMD with exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Moisture Sensitivity Level (MSL) | MSL 2 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant | Compliant |
| Pin Configuration | Drain Pin 5, Gate Pin 1, Power Source Pin 3-4, Driver Source Pin 2 | β |
| Series | β | CoolMOS P7 |
| On-Resistance (RDS(on)) max | β | 105 mΞ© |
| Continuous Drain Current (ID) at Tc | β | 33 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Ptot) at Tc | β | 137 W |
| Gate Threshold Voltage (VGS(th)) typ | β | 3.5 V |
| Gate Charge (Qg) typ | β | 45 nC |
| Operating Temperature Range | β | -55C to +150C |
| Channel Type | β | N-Channel |
| MSL Level | β | [DATA_NEEDED: MSL rating] |
| Halogen-Free | β | Yes |
| Lead-Free | β | Yes |