IPL60R125P7AUMA1 vs IPL60R105P7AUMA1 Comparison

Detailed side-by-side comparison of IPL60R125P7AUMA1 by Infineon and IPL60R105P7AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPL60R125P7AUMA1 IPL60R105P7AUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolMOS P7 —
Technology Superjunction (SJ) N-channel MOSFET Superjunction (SJ) N-Channel Power MOSFET
Drain-Source Voltage (VDS) 600 V 600 V
Continuous Drain Current (ID, Tc=25C) 27 A —
On-State Resistance RDS(on) max 125 mOhm —
Gate Charge (Qg, typ) 36 nC —
Total Gate Charge Qg (typ) 36 nC —
Output Capacitance Coss (typ) [DATA_NEEDED: Coss value] —
Reverse Recovery Charge Qrr [DATA_NEEDED: Qrr] —
Rise Time / Fall Time (tr/tf) [DATA_NEEDED: tr/tf] —
Gate-Source Voltage (VGS) +/-20 V (max) —
Gate Threshold Voltage VGS(th), typ 3.5 V —
Avalanche Energy (EAS) [DATA_NEEDED: EAS] —
Operating Junction Temperature -55 C to +150 C —
Package ThinPAK 8x8 (4-pin + exposed pad) PG-VSON-4 (4-pin SMD with exposed pad)
Mounting Type Surface Mount Surface Mount
Moisture Sensitivity Level (MSL) MSL 2 (per JEDEC J-STD-020) —
RoHS Status Compliant Compliant
Pin Configuration Drain Pin 5, Gate Pin 1, Power Source Pin 3-4, Driver Source Pin 2 —
Series — CoolMOS P7
On-Resistance (RDS(on)) max — 105 mΩ
Continuous Drain Current (ID) at Tc — 33 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (Ptot) at Tc — 137 W
Gate Threshold Voltage (VGS(th)) typ — 3.5 V
Gate Charge (Qg) typ — 45 nC
Operating Temperature Range — -55C to +150C
Channel Type — N-Channel
MSL Level — [DATA_NEEDED: MSL rating]
Halogen Free — Yes
Lead-Free — Yes

Datasheets & Resources

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