IPL60R125P7AUMA1 vs IPL60R105P7AUMA1 比較
詳細並排比較 IPL60R125P7AUMA1 由 Infineon 與 IPL60R105P7AUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 ✓ 啟用中規格比較
| 參數 | IPL60R125P7AUMA1 | IPL60R105P7AUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 | — |
| Technology | Superjunction (SJ) N-channel MOSFET | Superjunction (SJ) N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID, Tc=25C) | 27 A | — |
| On-State Resistance RDS(on) max | 125 mOhm | — |
| Gate Charge (Qg, typ) | 36 nC | — |
| Total Gate Charge Qg (typ) | 36 nC | — |
| Output Capacitance Coss (typ) | [DATA_NEEDED: Coss value] | — |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr] | — |
| Rise Time / Fall Time (tr/tf) | [DATA_NEEDED: tr/tf] | — |
| Gate-Source Voltage (VGS) | +/-20 V (max) | — |
| Gate Threshold Voltage VGS(th), typ | 3.5 V | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS] | — |
| 工作接面溫度 | -55 C to +150 C | — |
| 封裝 | ThinPAK 8x8 (4-pin + exposed pad) | PG-VSON-4 (4-pin SMD with exposed pad) |
| 安裝類型 | Surface Mount | Surface Mount |
| 濕度敏感等級 (MSL) | MSL 2 (per JEDEC J-STD-020) | — |
| RoHS 狀態 | Compliant | Compliant |
| Pin Configuration | Drain Pin 5, Gate Pin 1, Power Source Pin 3-4, Driver Source Pin 2 | — |
| Series | — | CoolMOS P7 |
| On-Resistance (RDS(on)) max | — | 105 mΩ |
| Continuous Drain Current (ID) at Tc | — | 33 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Ptot) at Tc | — | 137 W |
| Gate Threshold Voltage (VGS(th)) typ | — | 3.5 V |
| Gate Charge (Qg) typ | — | 45 nC |
| 工作溫度範圍 | — | -55C to +150C |
| Channel Type | — | N-Channel |
| MSL 等級 | — | [DATA_NEEDED: MSL rating] |
| 無鹵素 | — | Yes |
| Lead-Free | — | Yes |