IPL65R200CFD7AUMA1 vs IPW60R037P7XKSA1 Perbandingan
Perbandingan bersamaan detil IPL65R200CFD7AUMA1 dari Infineon dan IPW60R037P7XKSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPL65R200CFD7AUMA1 | IPW60R037P7XKSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS CFD7 | CoolMOS™ P7 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 650 V | — |
| Continuous Drain Current (ID, Tc) | 14 A | — |
| Power Dissipation (PD, Tc) | 81 W | — |
| On-Resistance (RDS(on)) | 0.2 ohm at VGS=10V, ID=5.2A | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | — |
| Technology | CoolMOS Superjunction (SJ) | CoolMOS Superjunction (SJ) |
| Paket | PG-VSON-4 | PG-TO247-3 (TO-247-3, through-hole) |
| Tipe Mounting | Surface Mount | Through Hole |
| Suhu Kerja | -55C to +150C (TJ) | — |
| Gate Charge (Qg) | [DATA_NEEDED: typical Qg value] | — |
| Body Diode | Fast-recovery intrinsic | — |
| Gate-Source ESD Protection | Yes (integrated) | — |
| Status RoHS | Compliant | Compliant |
| Tipe Transistor | — | N-Channel MOSFET (Superjunction) |
| Drain-Source Voltage (V_DSS) | — | 600 V |
| Continuous Drain Current (I_D, Tc=25 °C) | — | 76 A |
| On-Resistance (R_DS(on), max, V_GS=10 V) | — | 37 mΩ |
| Power Dissipation (P_D, Tc=25 °C) | — | 255 W |
| Gate Threshold Voltage (V_GS(th), typ) | — | 3.5 V |
| Suhu Hubung Kerja | — | -55 °C to +150 °C |
| Orderable Part Number Suffix | — | XKSA1 (tube packaging, industrial) |
| Avalanche Rated | — | Yes |