IPL65R200CFD7AUMA1 vs IPW60R037P7XKSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPL65R200CFD7AUMA1 sa pamamagitan ng Infineon at IPW60R037P7XKSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPL65R200CFD7AUMA1 - 650V 14A CoolMOS CFD7 MOSFET | Infineon
IPL65R200CFD7AUMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IPL65R200CFD7AUMA1 | IPW60R037P7XKSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS CFD7 | CoolMOS™ P7 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 650 V | — |
| Continuous Drain Current (ID, Tc) | 14 A | — |
| Power Dissipation (PD, Tc) | 81 W | — |
| On-Resistance (RDS(on)) | 0.2 ohm at VGS=10V, ID=5.2A | — |
| Gate Threshold Voltage (VGS(th)) | 3.5 V | — |
| Technology | CoolMOS Superjunction (SJ) | CoolMOS Superjunction (SJ) |
| Packhaging | PG-VSON-4 | PG-TO247-3 (TO-247-3, through-hole) |
| Uri ng Pagpapasok | Surface Mount | Through Hole |
| Temperature na Operasyon | -55C to +150C (TJ) | — |
| Gate Charge (Qg) | [DATA_NEEDED: typical Qg value] | — |
| Body Diode | Fast-recovery intrinsic | — |
| Gate-Source ESD Protection | Yes (integrated) | — |
| Tindminan RoHS | Compliant | Compliant |
| Uri ng Transistor | — | N-Channel MOSFET (Superjunction) |
| Drain-Source Voltage (V_DSS) | — | 600 V |
| Continuous Drain Current (I_D, Tc=25 °C) | — | 76 A |
| On-Resistance (R_DS(on), max, V_GS=10 V) | — | 37 mΩ |
| Power Dissipation (P_D, Tc=25 °C) | — | 255 W |
| Gate Threshold Voltage (V_GS(th), typ) | — | 3.5 V |
| Temperature ng Junction na Operasyon | — | -55 °C to +150 °C |
| Orderable Part Number Suffix | — | XKSA1 (tube packaging, industrial) |
| Avalanche Rated | — | Yes |