IPP069N20NM6AKSA1 vs IPB60R040CFD7ATMA1 Perbandingan
Perbandingan bersamaan detil IPP069N20NM6AKSA1 dari Infineon dan IPB60R040CFD7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPP069N20NM6AKSA1 - 200V 136A OptiMOS 6 N-Channel MOSFET | Infineon
IPP069N20NM6AKSA1 ✓ AktifInfineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΩ CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPP069N20NM6AKSA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | — | In Stock |
| Harga Unit (USD) | — | $5,19 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 200 V | 600 V |
| Continuous Drain Current (ID) at TC=25C | 136 A | — |
| Continuous Drain Current (ID) at TA=25C | 15.3 A | — |
| Power Dissipation (PD) at TC=25C | 300 W | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| On-Resistance RDS(on) max at VGS=10V | 6.9 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Total Gate Charge at VGS=10V (Qg) | [DATA_NEEDED: Qg value] | — |
| Rentang Suhu Kerja | -55C to +175C | -55°C to +150°C |
| Paket | PG-TO220-3-1 (TO-220-3 through-hole, 3+tab) | PG-TO263-3-2 (D2PAK) |
| Tipe Mounting | Through Hole | Surface Mount |
| Technology | OptiMOS 6 trench MOSFET | Superjunction (SJ) N-Channel MOSFET |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Level MSL | N/A (through-hole package) | 1 |
| Tab Connection | Electrically connected to Drain | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolMOS CFD7 |
| Continuous Drain Current (ID, Tc=25°C) | — | 50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 40 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 4 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| Dissipasi Listrik (TC=25°C) | — | 227 W |
| Integrated Body Diode | — | Yes - ultra-fast CoolMOS CFD7 diode |
| Target Applications | — | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |