IPP075N15N3GXKSA1 vs IPP200N15N3GXKSA1 Perbandingan

Perbandingan bersamaan detil IPP075N15N3GXKSA1 dari Infineon dan IPP200N15N3GXKSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPP075N15N3GXKSA1 IPP200N15N3GXKSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 3 —
Technology N-Channel MOSFET (OptiMOS 3) OptiMOS 3
Drain-Source Voltage (VDS) 150 V —
Continuous Drain Current (ID, Tc=25C) 100 A —
Power Dissipation (PD, Tc=25C) 300 W —
On-State Resistance (RDS(on) max, VGS=10V) 7.5 mOhm —
Gate-Source Voltage (VGS) [DATA_NEEDED: gate-source voltage absolute max] —
Paket PG-TO220-3 (TO-220 through-hole) TO-220-3 (PG-TO220-3), through-hole
Tipe Mounting Through Hole Through Hole
Rentang Suhu Kerja [DATA_NEEDED: junction operating temperature range] —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Lead-Free / RoHS RoHS Compliant —
Ordering Code Suffix GXKSA1 (Tube pack, RoHS compliant) —
Drain-Source Voltage (VDS max) — 150 V
Continuous Drain Current (ID max, Tc) — 50 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance (RDS(on) max) — 20 mOhm at VGS = 10 V
Gate-Source Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical]
Gate Charge (Qg typ) — [DATA_NEEDED: Qg typical]
Total Power Dissipation (Ptot max, Tc=25C) — 150 W
Channel Type — N-Channel
Rentang Suhu Hubung Kerja — -55 C to +175 C
Status RoHS — Compliant
Lead-Free — Yes
Level MSL — Not Applicable (through-hole)

Spek dan Sumber

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