IPP075N15N3GXKSA1 vs IPP200N15N3GXKSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPP075N15N3GXKSA1 disebabkan oleh Infineon dan IPP200N15N3GXKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPP075N15N3GXKSA1 IPP200N15N3GXKSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 3 —
Technology N-Channel MOSFET (OptiMOS 3) OptiMOS 3
Drain-Source Voltage (VDS) 150 V —
Continuous Drain Current (ID, Tc=25C) 100 A —
Power Dissipation (PD, Tc=25C) 300 W —
On-State Resistance (RDS(on) max, VGS=10V) 7.5 mOhm —
Gate-Source Voltage (VGS) [DATA_NEEDED: gate-source voltage absolute max] —
Kemasan PG-TO220-3 (TO-220 through-hole) TO-220-3 (PG-TO220-3), through-hole
Jenis Pemasangan Through Hole Through Hole
Gambaran Suhu Operasi [DATA_NEEDED: junction operating temperature range] —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Lead-Free / RoHS RoHS Compliant —
Ordering Code Suffix GXKSA1 (Tube pack, RoHS compliant) —
Drain-Source Voltage (VDS max) — 150 V
Continuous Drain Current (ID max, Tc) — 50 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance (RDS(on) max) — 20 mOhm at VGS = 10 V
Gate-Source Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical]
Gate Charge (Qg typ) — [DATA_NEEDED: Qg typical]
Total Power Dissipation (Ptot max, Tc=25C) — 150 W
Channel Type — N-Channel
Gambaran Suhu Hubungan Operasi — -55 C to +175 C
Status RoHS — Compliant
Lead-Free — Yes
Aras MSL — Not Applicable (through-hole)

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