IPZ40N04S53R1ATMA1 vs BSC0902NSATMA1 Perbandingan

Perbandingan bersamaan detil IPZ40N04S53R1ATMA1 dari Infineon dan BSC0902NSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPZ40N04S53R1ATMA1 IPZ40N04S53R1ATMA1 - 40V 40A OptiMOS 5 N-MOSFET | Infineon

IPZ40N04S53R1ATMA1 - 40V 40A OptiMOS 5 N-MOSFET | Infineon

IPZ40N04S53R1ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPZ40N04S53R1ATMA1 BSC0902NSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology MOSFET (Metal Oxide) —
Drain-to-Source Voltage (V_DSS) 40 V —
Continuous Drain Current (I_D) at Tc=25 C 40 A —
Power Dissipation (P_D) at Tc=25 C 71 W —
R_DS(on) max at V_GS=10 V, I_D=20 A 3.1 mOhm —
Drive Voltage (Max R_DS on, Min R_DS on) 7 V, 10 V —
Maximum V_GS +/-20 V —
Rentang Suhu Kerja -55 C to +175 C -55C to +150C (Tj)
Paket PG-TSDSON-8 (5x6 mm) with exposed pad PG-TDSON-8-6 (SuperSO8)
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (260 C peak reflow) —
Qualification AEC-Q101 automotive JEDEC qualified for target applications
Avalanche Tested 100 % —
RoHS Compliance Compliant (Green Product) Compliant (Pb-free lead plating)
Series OptiMOS 5 (IPZ family) —
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID, Ta) — 24 A
Pulsed Drain Current (IDM, Tc) — 100 A
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 48 W
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical value]
RDS(on) @ VGS=10V max — [DATA_NEEDED: RDS(on) at VGS=10V]
RDS(on) @ VGS=4.5V max — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Total Gate Charge (Qg typ) — [DATA_NEEDED: Qg typical]
Bebas Halogen — Yes, per IEC 61249-2-21
Avalanche Rated — Yes (100% avalanche tested)

Spek dan Sumber

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