IQD005N04NM6CGATMA1 vs BSC093N15NS5ATMA1 Perbandingan
Perbandingan bersamaan detil IQD005N04NM6CGATMA1 dari Infineon dan BSC093N15NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IQD005N04NM6CGATMA1 | BSC093N15NS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 6 (trench FET) | OptiMOS 5 150V |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Gate-to-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| RDS(on) Typical | 0.5 mΩ | — |
| Continuous Drain Current (ID) at Ta | 58 A | — |
| Continuous Drain Current (ID) at Tc | 610 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulsed rating] | — |
| Power Dissipation at Ta | 3 W | — |
| Power Dissipation at Tc | 333 W | — |
| Rentang Suhu Kerja | -55 °C to +150 °C (TJ) | [DATA_NEEDED: operating temperature range] |
| Paket | PG-TTFN-9-U02 (Source-Down 5x6 mm²) | SuperSO8 5x6 (PG-TDSON-8-7) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 9 | — |
| Level MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Source Configuration | Source-Down (bottom-side source for PCB heatsinking) | — |
| Manufacturer | — | Infineon Technologies |
| Drain-Source Voltage (VDS) Max | — | 150 V |
| Continuous Drain Current (ID) at TC | — | 87 A |
| Drain-Source On-Resistance (RDS(on)) Max at VGS=10V | — | 9.3 mΩ |
| Power Dissipation (PD) at TC | — | 139 W |
| Gate Drive Voltage (VGS) Recommended | — | 10 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge Qg] |
| Bebas Halogen | — | [DATA_NEEDED: halogen free status] |