IQD005N04NM6CGATMA1 vs BSC093N15NS5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQD005N04NM6CGATMA1 disebabkan oleh Infineon dan BSC093N15NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IQD005N04NM6CGATMA1 IQD005N04NM6CGATMA1 - 40V 0.5mΩ OptiMOS 6 MOSFET | Infineon

IQD005N04NM6CGATMA1 - 40V 0.5mΩ OptiMOS 6 MOSFET | Infineon

IQD005N04NM6CGATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQD005N04NM6CGATMA1 BSC093N15NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Technology OptiMOS 6 (trench FET) OptiMOS 5 150V
Drain-to-Source Voltage (VDS) 40 V —
Gate-to-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
RDS(on) Typical 0.5 mΩ —
Continuous Drain Current (ID) at Ta 58 A —
Continuous Drain Current (ID) at Tc 610 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulsed rating] —
Power Dissipation at Ta 3 W —
Power Dissipation at Tc 333 W —
Gambaran Suhu Operasi -55 °C to +150 °C (TJ) [DATA_NEEDED: operating temperature range]
Kemasan PG-TTFN-9-U02 (Source-Down 5x6 mm²) SuperSO8 5x6 (PG-TDSON-8-7)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 9 —
Aras MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Status RoHS Compliant Compliant
Lead-Free Yes —
Source Configuration Source-Down (bottom-side source for PCB heatsinking) —
Manufacturer — Infineon Technologies
Drain-Source Voltage (VDS) Max — 150 V
Continuous Drain Current (ID) at TC — 87 A
Drain-Source On-Resistance (RDS(on)) Max at VGS=10V — 9.3 mΩ
Power Dissipation (PD) at TC — 139 W
Gate Drive Voltage (VGS) Recommended — 10 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge Qg]
Boson Bebas — [DATA_NEEDED: halogen free status]

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