IQDH35N03LM5CGATMA1 vs IQE036N08NM6CGSCATMA1 Perbandingan

Perbandingan bersamaan detil IQDH35N03LM5CGATMA1 dari Infineon dan IQE036N08NM6CGSCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IQE036N08NM6CGSCATMA1 IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon

IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon

IQE036N08NM6CGSCATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IQDH35N03LM5CGATMA1 IQE036N08NM6CGSCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-to-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Ta 66 A —
Pulsed Drain Current (IDM) at Tc 700 A —
Gate-to-Source Voltage (VGS) max ±20 V —
Static Drain-to-Source On-Resistance (RDS(on)) 0.35 mΩ (typical at VGS=10 V) —
Power Dissipation (PD) at Ta 2.5 W —
Power Dissipation (PD) at Tc 278 W —
Rentang Suhu Kerja -55 °C to +175 °C -55 C to +150 C (junction, per datasheet derating curves)
Paket PG-TTFN-9-U02 (PQFN 5x6 mm²) —
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 —
Status RoHS Compliant Compliant
Bebas Halogen Yes —
Channel Type N-Channel —
Technology OptiMOS 5 trench MOSFET Trench MOSFET (OptiMOS 6)
Manufacturer — Infineon Technologies
Series — OptiMOS 6
Part Status — Active
FET Type — N-Channel
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) at TA — 16.7 A
Continuous Drain Current (ID) at TC — 118 A
Power Dissipation (PD) at TA — 2.5 W
Power Dissipation (PD) at TC — 125 W
Paket / Case — PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm)
Configuration — Source Down, Center Gate, Dual-Side Cooling
Packing — Tape and Reel (suffix ATMA1)
Voltage Rating — 60 V to 100 V category (80 V nominal)

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IQE036N08NM6CGSCATMA1

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