IQDH35N03LM5CGATMA1 vs IQE036N08NM6CGSCATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQDH35N03LM5CGATMA1 disebabkan oleh Infineon dan IQE036N08NM6CGSCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IQE036N08NM6CGSCATMA1 IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon

IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon

IQE036N08NM6CGSCATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQDH35N03LM5CGATMA1 IQE036N08NM6CGSCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-to-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Ta 66 A —
Pulsed Drain Current (IDM) at Tc 700 A —
Gate-to-Source Voltage (VGS) max ±20 V —
Static Drain-to-Source On-Resistance (RDS(on)) 0.35 mΩ (typical at VGS=10 V) —
Power Dissipation (PD) at Ta 2.5 W —
Power Dissipation (PD) at Tc 278 W —
Gambaran Suhu Operasi -55 °C to +175 °C -55 C to +150 C (junction, per datasheet derating curves)
Kemasan PG-TTFN-9-U02 (PQFN 5x6 mm²) —
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 —
Status RoHS Compliant Compliant
Boson Bebas Yes —
Channel Type N-Channel —
Technology OptiMOS 5 trench MOSFET Trench MOSFET (OptiMOS 6)
Manufacturer — Infineon Technologies
Series — OptiMOS 6
Part Status — Active
FET Type — N-Channel
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) at TA — 16.7 A
Continuous Drain Current (ID) at TC — 118 A
Power Dissipation (PD) at TA — 2.5 W
Power Dissipation (PD) at TC — 125 W
Kemasan / Case — PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm)
Configuration — Source Down, Center Gate, Dual-Side Cooling
Packing — Tape and Reel (suffix ATMA1)
Voltage Rating — 60 V to 100 V category (80 V nominal)

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